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APTGF50DA120CT1G
Boost chopper NPT IGBT SiC Chopper diode
Application
5 6 11
VCES = 1200V IC = 50A @ Tc = 80C
CR1
* * *
AC and DC motor control Switched Mode Power Supplies Power Factor Correction
Features
3 4 CR2 9 10 1 2 12
*
NTC
Q2
Non Punch Through (NPT) Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Low leakage current - RBSOA and SCSOA rated Chopper SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF Very low stray inductance Internal thermistor for temperature monitoring High level of integration
*
* * * Benefits * * * * Pins 1/2 ; 3/4 ; 5/6 must be shorted together * *
Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS Compliant Max ratings 1200 75 50 150 20 312 100A @ 1200V Unit V A V W
September, 2009 1-7 APTGF50DA120CT1G - Rev 0
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area Tc = 25C Tc = 80C Tc = 25C Tc = 25C Tj = 150C
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTGF50DA120CT1G
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V Tj = 25C VCE = 1200V Tj = 125C Tj = 25C VGE =15V IC = 50A Tj = 125C VGE = VCE, IC = 1 mA VGE = 20 V, VCE = 0V Min Typ Max 250 500 3.7 6.5 100 Unit A V V nA
3.2 4.0 4.5
Dynamic Characteristics
Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Isc Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Emitter Charge Gate - Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Short Circuit data Test Conditions VGE = 0V VCE = 25V f = 1MHz VGS = 15V VBus = 600V IC = 50A Inductive Switching (25C) VGE = 15V VBus = 600V IC = 50A RG = 5 Inductive Switching (125C) VGE = 15V VBus = 600V IC = 50A RG = 5 VGE = 15V Tj = 125C VBus = 600V IC = 50A Tj = 125C RG = 5 VGE 15V ; VBus = 900V tp 10s ; Tj = 125C Min Typ 3450 330 220 330 35 200 35 65 320 30 35 65 360 40 4.2 mJ 3.05 300 A Max Unit pF
nC
ns
ns
Chopper SiC diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF QC C Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Total Capacitive Charge Total Capacitance IF = 20A Test Conditions VR=1200V Tj = 25C Tj = 175C
Tc = 100C
Min 1200
Typ 64 112 20 1.6 2.3 80 192 138
Max 400 2000 1.8 3
Unit V A A V nC pF
September, 2009 2-7 APTGF50DA120CT1G - Rev 0
Tj = 25C Tj = 175C IF = 20A, VR = 600V di/dt =1000A/s f = 1MHz, VR = 200V f = 1MHz, VR = 400V
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APTGF50DA120CT1G
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT SiC Chopper Diode 4000 -40 -40 -40 2.5 Min Typ Max 0.4 1 150 125 100 4.7 80 Unit
C/W
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
V C N.m g
To heatsink
M4
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol R25 R25/R25 B25/85 B/B Characteristic Resistance @ 25C T25 = 298.15 K TC=100C
RT = R25 T: Thermistor temperature 1 1 RT: Thermistor value at T exp B25 / 85 T - T 25
Min
Typ 50 5 3952 4
Max
Unit k % K %
SP1 Package outline (dimensions in mm)
See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com
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3-7
APTGF50DA120CT1G - Rev 0
September, 2009
APTGF50DA120CT1G
Typical IGBT Performance Curve
100 Ic, Collector Current (A) 80 60 40 20 0 0 1 2 3 4 5 VCE, Collector to Emitter Voltage (V) Transfer Characteristics VGE, Gate to Emitter Voltage (V) 18 16 14 12 10 8 6 4 2 0 0 50 100 150 200 250 300 350 Gate Charge (nC) DC Collector Current vs Case Temperature
VCE=960V IC = 50A TJ = 25C VCE=240V VCE=600V 250s Pulse Test < 0.5% Duty cycle
Output characteristics (VGE=15V)
250s Pulse Test < 0.5% Duty cycle
40
Ic, Collector Current (A)
Output Characteristics (VGE=10V)
250s Pulse Test < 0.5% Duty cycle TJ=25C
30
TJ=25C TJ=125C
20
TJ=125C
10
0
6
0
1 2 3 VCE, Collector to Emitter Voltage (V)
Gate Charge
4
100
Ic, Collector Current (A)
75
50
TJ=125C
25
TJ=25C
0 0 2 4 6 8 10 VGE, Gate to Emitter Voltage (V)
Breakdown Voltage vs Junction Temp. Collector to Emitter Breakdown Voltage (Normalized) 1.15
12
70 Ic, DC Collector Current (A) 60 50 40 30 20 10 0
1.10
1.05
1.00
0.95 25 50 75 100 125 TJ, Junction Temperature (C)
25
50 75 100 125 TC, Case Temperature (C)
150
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4-7
APTGF50DA120CT1G - Rev 0
September, 2009
APTGF50DA120CT1G
Turn-On Delay Time vs Collector Current
VCE = 600V RG = 5 VGE = 15V
Turn-Off Delay Time vs Collector Current td(off), Turn-Off Delay Time (ns)
td(on), Turn-On Delay Time (ns)
45
400
VGE=15V, TJ=125C
40
350
35
300
VGE=15V, TJ=25C VCE = 600V RG = 5
30
250
25 0 25 50 75 100 125 ICE, Collector to Emitter Current (A) Current Rise Time vs Collector Current 180
VCE = 600V RG = 5
200 0 25 50 75 100 125
ICE, Collector to Emitter Current (A) Current Fall Time vs Collector Current 50 45
tr, Rise Time (ns)
tf, Fall Time (ns)
140
40 35 30
TJ = 125C
100
VGE=15V
60
TJ = 25C
25 20 0 25 50 75 100 ICE, Collector to Emitter Current (A) 125 20 0
VCE = 600V, VGE = 15V, RG = 5
25 50 75 100 ICE, Collector to Emitter Current (A)
125
Eon, Turn-On Energy Loss (mJ)
14 12 10 8 6 4 2 0 0
VCE = 600V RG = 5
TJ=125C, VGE=15V
Eoff, Turn-off Energy Loss (mJ)
16
Turn-On Energy Loss vs Collector Current 8
Turn-Off Energy Loss vs Collector Current
VCE = 600V VGE = 15V RG = 5 TJ = 125C
6
4
TJ = 25C
TJ=25C, VGE=15V
2
0 0 25 50 75 100 ICE, Collector to Emitter Current (A) 125
25 50 75 100 ICE, Collector to Emitter Current (A)
125
Switching Energy Losses (mJ)
Switching Energy Losses vs Gate Resistance 10 Switching Energy Losses (mJ) 8 6 4 2 0 0
Eoff, 25A Eoff, 25A VCE = 600V VGE = 15V TJ= 125C Eon, 50A Eoff, 50A
5 4 3 2 1 0
Switching Energy Losses vs Junction Temp.
VCE = 600V VGE = 15V RG = 5 Eon, 50A
Eoff, 50A
Eon, 25A
Eon, 25A
10 20 30 40 Gate Resistance (Ohms)
50
25
50 75 100 TJ, Junction Temperature (C)
125
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5-7
APTGF50DA120CT1G - Rev 0
Eoff, 25A
September, 2009
APTGF50DA120CT1G
Capacitance vs Collector to Emitter Voltage 10000
Cies
Reverse Bias Safe Operating Area 120 IC, Collector Current (A) 100 80 60 40 20 0 0 400 800 1200 VCE, Collector to Emitter Voltage (V)
C, Capacitance (pF)
1000
Coes
100 0
Cres
10 20 30 40 VCE, Collector to Emitter Voltage (V)
50
0.45 Thermal Impedance (C/W) 0.4 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0.3 0.1 0.05 0.7 0.5 0.9
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Single Pulse 0.0001 0.001 0.01 0.1 1 10
0 0.00001
Rectangular Pulse Duration (Seconds) Operating Frequency vs Collector Current 120 100
ZVS VCE = 600V D = 50% RG = 5 TJ = 125C TC= 75C ZCS
Fmax, Operating Frequency (kHz)
80 60 40 20 0 10
Hard switching
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6-7
APTGF50DA120CT1G - Rev 0
September, 2009
20 30 40 50 IC, Collector Current (A)
60
APTGF50DA120CT1G
Typical SiC chopper diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.2 Thermal Impedance (C/W) 1 0.8 0.6 0.4 0.2 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10
0 0.00001
Rectangular Pulse Duration (Seconds) Forward Characteristics
TJ=25C
Reverse Characteristics 200 IR Reverse Current (A)
40
IF Forward Current (A)
30 20
TJ=75C
150
100
TJ=125C
TJ=75C TJ=125C TJ=175C TJ=25C
10 0 0 0.5 1 1.5 2
TJ=175C
50
2.5
3
3.5
0 400
600
800
1000 1200 1400 1600
VF Forward Voltage (V) Capacitance vs.Reverse Voltage
VR Reverse Voltage (V)
1400 C, Capacitance (pF) 1200 1000 800 600 400 200 0 1 10 100 VR Reverse Voltage 1000
September, 2009 7-7 APTGF50DA120CT1G - Rev 0
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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